Method of fabricating backside-illuminated image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Chieh Huang, Dun-Nian Yaung, Chih-Jen Wu, Chen-Ming Huang
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Abstract
Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.
Claims20
A method for forming a semiconductor device, the method comprising:
- providing a device substrate having a frontside and a backside defined thereupon, the backside opposite the frontside, the device substrate further having a plurality of pixels formed at the frontside;
- forming a color filter layer and one or more microlenses on the backside of the device substrate;
- forming a dam structure on the backside of the device substrate;
- and
- coupling a backside substrate to the dam structure, wherein the backside substrate is coupled to the dam structure to define a cavity surrounding the color filter layer and the one or more microlenses.
A method for forming a semiconductor device, the method comprising:
- providing a device substrate having a frontside and a backside, wherein a plurality of pixels are formed at the frontside;
- forming an interconnect structure over the pixels, the interconnect structure including a bonding pad;
- bonding a glass substrate to the interconnect structure;
- forming a redistribution layer over the glass substrate;
- etching a portion of the glass substrate and the interconnect structure to expose the bonding pad, the etching defining an etched region;
- depositing a conductive material within the etched region, the conductive material electrically coupled to the bonding pad.
A semiconductor device comprising:
- a device substrate having a frontside and a backside defined thereupon, the backside opposite the frontside;
- a plurality of pixels disposed at the frontside of the device substrate;
- an interconnect structure disposed over and coupled to the frontside of the device substrate;
- a dam structure coupled to the backside of the device substrate;
- a backside substrate coupled to the dam structure, wherein the backside of the device substrate, the dam structure, and the backside substrate define a cavity;
- and
- a color filter layer and a microlens layer disposed on the backside of the device substrate within the cavity.
Dependencies are inferred from the claim text.