Photo detector and integrated circuit
AssigneeInternational Business Machines Corporation
InventorsMatthias Fertig, Nikolaj Moll, Thomas Morf, Thomas Pflueger
Life of this patent
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Abstract
The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.
Claims29
1-15. (canceled)
An integrated circuit, comprising:
- at least a substrate, a second level and a first level intermediate the substrate and the second level, wherein the integrated circuit includes a photo detector including:
- a photo transistor having a light sensitive region in the first level that controls switching of the photo transistor;
- a dielectric layer in contact with the photo transistor;
- and
- a grating pattern in contact with the dielectric layer, wherein the grating pattern and the dielectric layer are configured to focus electromagnetic radiation in the light sensitive region, wherein the second level comprises electrical circuitry that forms at least a portion of the grating pattern.
An integrated circuit, comprising:
- at least a substrate, a second level and a first level intermediate the substrate and the second level, wherein the integrated circuit includes a photo detector including:
- a photo transistor, wherein the photo transistor is a field effect transistor having a source, a drain and a gate, wherein the gate is a light sensitive region in the first level that controls switching of the photo transistor;
- a dielectric layer in contact with the photo transistor;
- and
- a grating pattern in contact with the dielectric layer, wherein the grating pattern and the dielectric layer are configured to focus electromagnetic radiation in the light sensitive region, wherein the second level comprises electrical circuitry that forms at least a portion of the grating pattern.
An integrated circuit, comprising:
- at least a substrate, a second level and a first level intermediate the substrate and the second level, wherein the integrated circuit includes a photo detector including:
- a photo transistor, wherein the photo transistor is a bipolar photo transistor having a having a collector, an emitter, a base, and a light-sensitive PN junction between the collector and the base, wherein the light sensitive PN junction is in the first level and controls switching of the photo transistor;
- a dielectric layer in contact with the photo transistor;
- and
- a grating pattern in contact with the dielectric layer, wherein the grating pattern and the dielectric layer are configured to focus electromagnetic radiation in the light sensitive region, wherein the second level comprises electrical circuitry that forms at least a portion of the grating pattern.
Dependencies are inferred from the claim text.