Process for preparing a beryllium oxide layer on a semiconductor substrate
AssigneeSematech, Inc.
InventorsJung Hwan YUM, Gennadi Bersuker, K. Sanjay Banerjee
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Abstract
A process for creating a beryllium oxide film on the surface of a semiconductor material is disclosed. The process is useful for making gate dielectric layers for metal-oxide-semiconductor (MOS) devices, particularly III-V semiconductor devices.
Claims18
A process for forming a beryllium oxide film on a substrate comprising the sequential steps of:
- (a) providing a substrate in a reaction chamber;
- (b) exposing said substrate to a dialkylberyllium or dihaloberyllium compound;
- (c) exposing said substrate to a source of oxygen,
- steps (b) and (c) comprising a single cycle,
- whereby said dialkylberyllium compound and said source of oxygen react to form a beryllium oxide film on said substrate.
An electronic device, comprising a IV or III-V semiconductor material substrate having disposed thereon a film comprising beryllium oxide, said substrate and said beryllium oxide film forming a beryllium oxide-semiconductor interface, wherein the concentration of beryllium 5 nm below the beryllium oxide-semiconductor interface is below 1 atom percent.
A transistor comprising:
- a body region between first and second source/drain regions in a IV or III-V semiconductor material substrate and a beryllium oxide-containing film on said body region, having a beryllium oxide-semiconductor interface therebetween, wherein the concentration in atom percent of beryllium 5 nm below the beryllium oxide-semiconductor interface is below 1 atom percent.
Dependencies are inferred from the claim text.