Integrated circuits having dummy gate electrodes and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMei-Hui HUANG, Chan-Hong CHERN
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Abstract
An integrated circuit includes at least one first gate electrode of at least one active transistor. The integrated circuit further includes at least one first dummy gate electrode and at least one second dummy gate electrode. The integrated circuit further includes at least one guard ring disposed around the at least one first gate electrode, the at least one first dummy gate electrode, and the at least one second dummy gate electrode. An ion implantation layer of the at least one guard ring substantially touches at least one of the at least one first dummy gate electrode or the at least one second dummy gate electrode.
Claims20
An integrated circuit comprising:
- at least one first gate electrode of at least one active transistor;
- at least one first dummy gate electrode;
- at least one second dummy gate electrode;
- and
- at least one guard ring disposed around the at least one first gate electrode, the at least one first dummy gate electrode, and the at least one second dummy gate electrode, wherein an ion implantation layer of the at least one guard ring substantially touches at least one of the at least one first dummy gate electrode or the at least one second dummy gate electrode.
An integrated circuit comprising:
- at least one gate electrode of at least one active transistor disposed over a substrate;
- at least one first dummy gate electrode;
- a first doped region disposed in the substrate and adjacent to a first side wall of the at least one first dummy gate electrode, wherein the first doped region has a first conductivity type dopant;
- and
- a second doped region disposed in the substrate and adjacent to a second side wall of the at least one first dummy gate electrode, wherein the second doped region has a second conductivity type dopant that is opposite to the first conductivity type dopant.
A package comprising:
- an integrated circuit, wherein the integrated circuit comprises:
- at least one first gate electrode of at least one active transistor;
- at least one first dummy gate electrode;
- at least one second dummy gate electrode;
- and
- at least one guard ring disposed around the at least one first gate electrode, the at least one first dummy gate electrode, and the at least one second dummy gate electrode, wherein an ion implantation layer of the at least one guard ring substantially touches at least one of the at least one first dummy gate electrode or the at least one second dummy gate electrode;
- and
- a substrate board connected to the integrated circuit.
Dependencies are inferred from the claim text.