Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications

A fin field-effect transistor (FinFET) comprising:

• a semiconductor substrate;
• a plurality of fins on the substrate including one or more regular fins and one or more shaped fins, wherein regular fins and shaped fins have different top portion shapes;
• and,
• an oxide layer on the semiconductor substrate embedding a bottom portion of the plurality of fins
• wherein the embedded bottom portion of the plurality of fins have substantially the same shape.

A method of forming a fin field-effect transistor (FinFET), said method comprising:

• forming a plurality of fins partially embedded in a shallow trench isolation (STI) layer on a semiconductor substrate;
• patterning a photoresist layer over the plurality of fins to form one or more openings exposing a single fin;
• and,
• shaping the exposed single fin.

A method of forming a fin field-effect transistor (FinFET), said method comprising:

• forming a plurality of fins partially embedded in a shallow trench isolation (STI) layer on a semiconductor substrate;
• depositing a dielectric layer over the STI layer to completely cover the plurality of fins;
• patterning a photoresist layer over the dielectric layer to form one or more openings over a single fin;
• etching through the dielectric layer to expose a single fin;
• removing the photoresist layer;
• and,
• shaping the exposed single fin.