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US 2013/0093024 A1Published application
STRUCTURE AND METHOD FOR INTEGRATING FRONT END SiCr RESISTORS IN HiK METAL GATE TECHNOLOGIES
AssigneeTexas Instruments Incorporated
InventorEbenezer Eshun
Life of this patent
Estimating the term…
Abstract
An integrated circuit having a replacement HiK metal gate transistor and a front end SiCr resistor. The SiCr resistor replaces the conventional polysilicon resistor in front end processing and is integrated into the contact module. The first level of metal interconnect is located above the SiCr resistor. First contacts connect to source/drain regions. Second contacts electrically connect the first level of interconnect to either the SiCr resistor or the metal replacement gate.
Claims18
An integrated circuit, comprising:
- a replacement HiK metal gate transistor having a metal gate and source/drain regions;
- a front end SiCr resistor;
- a first level of interconnect located over the replacement HiK metal gate transistor and the front end SiCr resistor;
- first contacts connected to said source/drain regions;
- and
- second contacts, wherein a first subset of said second contacts are connected between the first level of interconnect and the front end SiCr resistor and a second subset of said second contacts is connected between the first level of interconnect and the metal gate.
3 more elements
A method of fabricating an integrated circuit comprising the steps of:
- forming a replacement HiK metal gate transistor on a substrate, wherein the replacement HiK metal gate transistor includes a metal replacement gate and a source/drain region;
- forming a first contact to connect to said source/drain region;
- forming a front end SiCr resistor;
- forming a plurality of second contacts wherein a first one and a second one of said plurality of second contacts connects to the front end SiCr resistor and a third one of said plurality of second contacts connects to the metal replacement gate;
- and
- forming a first level of interconnect over the plurality of second contacts and the front end SiCr resistor, wherein said first one and said second one of said plurality of second contacts electrically connects the first level of interconnect to the front end SiCr resistor and the third one of said plurality of second contacts electrically connects the first level of interconnect to the metal replacement gate.
3 more elements
Dependencies are inferred from the claim text.