Carbon implant for workfunction adjustment in replacement gate transistor
AssigneeInternational Business Machines Corporation
InventorsDechao GUO, Shu-Jen HAN, Keith Kwong Hon WONG, Jun YUAN
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Abstract
A transistor includes a semiconductor body having a channel formed in the semiconductor body; a high dielectric constant gate insulator layer disposed over a surface of an upper portion of the channel; and a gate metal layer disposed over the high dielectric constant gate insulator layer. The channel contains Carbon implanted through the gate metal layer, the high dielectric constant gate insulator layer and the surface to form in the upper portion of the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the transistor.
Claims17
A transistor, comprising:
- a semiconductor body having a channel formed in the semiconductor body;
- a high dielectric constant gate insulator layer disposed over a surface of an upper portion of the channel;
- and
- a gate metal layer disposed over the high dielectric constant gate insulator layer, where
- the channel contains Carbon implanted through the gate metal layer, the high dielectric constant gate insulator layer and the surface to form in the upper portion of the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the transistor.
A structure comprising:
- a layer of semiconductor material;
- a first field effect transistor formed at least partially in the layer of semiconductor material;
- and
- a second field effect transistor formed at least partially in the layer of semiconductor material;
- where
- the first field effect transistor is comprised of a gate insulator layer disposed over a surface of a channel foiiiied in the layer of semiconductor material and a gate metal layer disposed over the gate insulator layer, the channel of the first field effect transistor containing Carbon is implanted through the gate metal layer, the gate insulator layer and the surface to form in the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the first field effect transistor;
- the second field effect transistor is comprised of a gate insulator layer disposed over a surface of a channel formed in the layer of semiconductor material and a gate metal layer disposed over the gate insulator layer, the channel of the second field effect transistor containing Carbon is implanted through the gate metal layer, the gate insulator layer and the surface to form in the channel a Carbon-implanted region having a substantially uniform concentration of Carbon selected to establish a voltage threshold of the second field effect transistor.
Dependencies are inferred from the claim text.