Lateral double diffused metal oxide semiconductor device and method for manufacturing the same

A method for manufacturing an LDMOS device, the method comprising:

• forming a first conduction type epitaxial layer on a semiconductor substrate;
• forming a second conduction type buried layer in the first conduction type epitaxial layer;
• forming a first conduction type drain extension region over a first region of the second conduction type buried layer;
• forming a first conduction type body through a first conduction type impurity ion implantation process in a partial region of the first conduction type drain extension region for forming a source region is to be formed;
• forming a second conduction type drain extension region through a second conduction type impurity ion implantation process in a portion of the first conduction type drain extension region which is connected to the first conduction type body and in which a drain region and a gate pattern are configured to be formed;
• forming a first guard ring including a second conduction type impurity layer around the second conduction type drain extension region;
• forming a second guard ring around the first guard ring, the second guard ring including a high-voltage second conduction type well connected to a second region of the second conduction type buried layer, and the high-voltage second conduction type well is configured to include a second conduction type impurity layer;
• and
• operating the second conduction type impurity layer of the first guard ring and the second conduction type impurity layer of the second guard ring as an isolation.