Lateral double diffused metal oxide semiconductor device and method for manufacturing the same

A method for manufacturing an LDMOS device, wherein the method comprising:

• forming a first conduction type epitaxial layer over a semiconductor substrate;
• forming a second conduction type buried layer in said first conduction type epitaxial layer;
• forming a first conduction type drain extension region over at least a portion of the second conduction type buried layer;
• forming a first conduction type body through a first conduction type impurity ion implantation process in at least a portion of the first conduction type drain extension region where a source region is to be formed;
• forming a second conduction type drain extension region through a second conduction type impurity ion implantation process in a portion of the first conduction type drain extension region which is connected to the first conduction type body and in which a drain region and a gate pattern will be formed;
• forming a first guard ring around the second conduction type drain extension region, wherein the first guard ring comprises a first conduction type impurity layer and a second conduction type impurity layer formed on both sides of said first conduction type impurity layer;
• and
• forming a second guard ring around the first guard ring through a first conduction type impurity ion implantation process.