High voltage device

A method of forming a device comprising:

• providing a substrate having a device region, wherein the device region comprises a source region, a gate region and a drain region defined thereon;
• forming a drift well in the substrate between the gate and drain region;
• depositing gate layers on the substrate;
• patterning the gate layers to form a gate in the gate region and a field structure surrounding the drain region;
• forming a source and a drain in the source region and drain region, wherein the drain is separated from the gate on a second side of the gate and the source is adjacent to a first side of the gate;
• and
• forming an interconnection to the field structure, the interconnection is coupled to a potential, wherein the potential distributes the electric field across the substrate between the second side of the gate and the drain.

A device comprising:

• a substrate having a device region, wherein the device region comprises a source region, a gate region and a drain region defined thereon;
• a field structure surrounding the drain region;
• a source and a drain in the source region and drain region, wherein the drain is separated from the gate on a second side of the gate and the source is adjacent to a first side of the gate;
• and
• an interconnection to the field structure, the interconnection is coupled to a potential, wherein the potential distributes the electric field across the substrate between the second side of the gate and the drain.