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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Pei Huang, Yi-Feng Chang, Jam-Wem Lee
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To limit or prevent current crowding, various HV-MOSFET embodiments include a current diversion region disposed near a drain region of an HV-MOSFET and near an upper surface of the semiconductor substrate. In some embodiments, the current diversion region is disposed near a field plate of the HV-MOSFET, wherein the field plate can also help to reduce or “smooth” electric fields near the drain to help limit current crowding. In some embodiments, the current diversion region is a p-doped, n-doped, or intrinsic region that is at a floating voltage potential. This current diversion region can push current deeper into the substrate of the HV-MOSFET (relative to conventional HV-MOSFETs), thereby reducing current crowding during ESD events. By reducing current crowding, the current diversion region makes the HV-MOSFETs disclosed herein more impervious to ESD events and, therefore, more reliable in real-world applications.
A semiconductor device, which is disposed on a semiconductor substrate having an upper surface, the semiconductor device comprising:
A semiconductor device, which is disposed on a semiconductor substrate having an upper surface, the semiconductor device comprising:
A semiconductor device, which is disposed on a semiconductor substrate having an upper surface, the semiconductor device comprising:
Dependencies are inferred from the claim text.