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US 2013/0092997 A1Published application
Non-volatile memory and manufacturing method thereof
AssigneeMacronix International Co., Ltd.
InventorsChih-Chieh Cheng, Shih-Guei Yan, Cheng-Hsien Cheng, Wen-Jer Tsai
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Abstract
A non-volatile memory and a manufacturing method thereof are provided. A first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the charge storage spacers. A conductive layer is formed on the second oxide layer.
Claims20
A manufacturing method of a non-volatile memory, comprising:
- forming a first oxide layer on a substrate, the first oxide layer having a protrusion;
- forming a pair of doped regions in the substrate at two sides of the protrusion;
- forming a pair of charge storage spacers on the sidewalls of the protrusion;
- forming a second oxide layer on the first oxide layer and the pair of charge storage spacers;
- and
- forming a conductive layer on the second oxide layer.
3 more elements
A non-volatile memory, comprising:
- a substrate;
- a charge storage structure disposed on the substrate;
- a first doped region and a second doped region disposed in the substrate at two sides of the charge storage structure respectively;
- and
- a gate disposed on the charge storage structure,
- wherein the charge storage structure comprises a dielectric main body, a first charge storage spacer, and a second charge storage spacer, the first charge storage spacer and the second charge storage spacer are disposed in the dielectric main body in minor symmetry and separated from each other, the first charge storage spacer is adjacent to the first doped region and the second charge storage spacer is adjacent to the second doped region, wherein the first charge storage spacer and the second charge storage spacer have an L shape respectively, and a horizontal portion of the first charge storage spacer and a horizontal portion of the second charge storage spacer extend away from each other, or the first charge storage spacer and the second charge storage spacer have a curved surface or a slanted surface respectively, and the curved surface or the slanted surface of the first charge storage spacer and the curved surface or the slanted surface of the second charge storage spacer are away from each other.
3 more elements
Dependencies are inferred from the claim text.