Spacer for Semiconductor Structure Contact

A method for forming a semiconductor structure, the method comprising:

• forming an epitaxial region in a substrate, the epitaxial region having a facet between a top surface of the substrate and a top surface of the epitaxial region, the substrate having a gate structure on the top surface of the substrate;
• depositing a spacer material laterally between the facet and the gate structure;
• and
• depositing an etch stop layer over the spacer material and the epitaxial region, the etch stop layer adjoining each of the spacer material and the epitaxial region, a ratio of an etch selectivity of the spacer material to an etch selectivity of the etch stop layer being equal to or less than 3:1.

A method for forming a semiconductor structure, the method comprising:

• providing a substrate, a gate being over the substrate, a hardmask being over the gate, a gate spacer being along a sidewall of the gate;
• forming a spacer material conformally along an exterior sidewall of the gate spacer and over a source/drain region in the substrate laterally disposed from the gate;
• removing the hardmask while the spacer material is along the exterior sidewall of the gate spacer;
• and
• removing a first portion of the spacer material to expose the source/drain region, a second portion of the spacer material remaining laterally disposed between the gate spacer and the source/drain region.