Photoelectric conversion apparatus and imaging system using the same

A photoelectric conversion apparatus comprising:

• a plurality of photoelectric conversion elements including first, second, and third photoelectric conversion elements for generating signal charges;
• a plurality of color filters including a first color filter arranged above the first photoelectric conversion element, a second color filter arranged above the second photoelectric conversion element, and a third color filter arranged above the third photoelectric conversion element;
• a first semiconductor region of a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element, and extended from a predetermined position toward a depth direction, the first semiconductor region having a first width;
• and
• a second semiconductor region of the first conductivity type arranged between the first photoelectric conversion element and the third photoelectric conversion element, and extended from the predetermined position toward the depth direction to a position deeper than that of the first semiconductor region, the second semiconductor region having a second width smaller than the first width.

A photoelectric conversion apparatus comprising:

• a plurality of photoelectric conversion elements including first, second, and third photoelectric conversion elements for generating signal charges;
• a plurality of color filters including a first color filter arranged above the first photoelectric conversion element, a second color filter arranged above the second photoelectric conversion element, and a third color filter arranged above the third photoelectric conversion element;
• a first semiconductor region of a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element, and extended from a predetermined position toward a depth direction, the first semiconductor region having a first width;
• and
• a second semiconductor region of the first conductivity type arranged between the first photoelectric conversion element and the third photoelectric conversion element, and extended from the predetermined position toward the depth direction, the second semiconductor region having a second width smaller than the first width, and the second semiconductor region having an impurity concentration higher than that of the first semiconductor region.