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US 2013/0092979 A1Published application
Semiconductor device with an electrode including an aluminum-silicon film
AssigneeFuji Electric Co., Ltd.
InventorsKenichi KAZAMA, Tsunehiro NAKAJIMA, Koji SASAKI, Akio SHIMIZU, Takashi HAYASHI, Hiroki WAKIMOTO
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Abstract
A semiconductor device, including a silicon substrate having a first major surface and a second major surface, a front surface device structure formed in a region of the first major surface, and a rear electrode formed in a region of the second major surface. The rear electrode includes, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 μm.
Claims6
1:
- A semiconductor device, comprising:
- a silicon substrate having a first major surface and a second major surface;
- a front surface device structure formed in a region of the first major surface;
- and
- a rear electrode formed in a region of the second major surface, the rear electrode including, as a first layer thereof, an aluminum silicon film that is formed by evaporating or sputtering aluminum-silicon onto the second major surface, the aluminum silicon film having a silicon concentration of at least 2 percent by weight and a thickness of less than 0.3 μm.
2 more elements
2:
- The semiconductor device of claim 1, wherein the rear electrode further includes a buffer metal film formed on a surface of the aluminum-silicon film.
3:
- The semiconductor device of claim 2, wherein the rear electrode further includes:
- a soldering metal film formed on a surface of the buffer metal film;
- and
- a protective metal film formed on a surface of the soldering metal film.
1 more element
4:
- The semiconductor device of claim 2, wherein the buffer metal film includes titanium or molybdenum.
5:
- The semiconductor device of claim 1, wherein the silicon substrate is of a thickness of 50 μm to 200 μm.
6:
- The semiconductor device of claim 1, further comprising a field stop type insulated gate bipolar transistor that includes, between the first major surface and the second major surface of the silicon substrate, a drift layer of a first conductivity type, a buffer layer of the first conductivity type, and a collector layer of a second conductivity type formed in a sequence from the first major surface, the collector layer being in contact with the aluminum-silicon film.