Power semiconductor diode, igbt, and method for manufacturing thereof

A power semiconductor diode, comprising:

• a semiconductor substrate comprising a first emitter region, a second emitter region of a second conductivity type, and a drift region of a first conductivity type forming a pn-junction with the second emitter region;
• a second emitter metallization in contact with the second emitter region;
• a first emitter metallization in contact with the first emitter region, the first emitter region comprising first doping regions of the first conductivity type forming ohmic contacts with the first emitter metallization and at least one second doping region of the first conductivity type laterally adjacent the first doping regions and forming a Schottky contact with the first emitter metallization.

An IGBT, comprising:

• a semiconductor substrate comprising a source region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type and an emitter region of the second conductivity type;
• a source metallization in contact with the source region;
• an emitter metallization in contact with the emitter region, the emitter region comprising a first doping region of the second conductivity type forming an ohmic contact with the emitter metallization and a second doping region of the second conductivity type forming a non-ohmic contact with the emitter metallization.