Semiconductor device
AssigneeFujitsu Limited
InventorTadahiro IMADA
Life of this patent
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Abstract
A transistor which includes an electron transit layer and an electron supply layer which are stacked in a thickness direction of a substrate; an electron transit layer formed over the substrate in parallel to the electron transit layer and the electron supply layer; an anode electrode which forms a Schottky junction with the electron transit layer; and a cathode electrode which forms an ohmic junction with the electron transit layer are provided. The anode electrode is connected to a source of the transistor, and the cathode electrode is connected to a drain of the transistor.
Claims19
A semiconductor device, comprising:
- a substrate;
- a transistor that comprises a first electron transit layer and an electron supply layer which are stacked in a thickness direction of the substrate;
- a second electron transit layer formed over the substrate in parallel to the first electron transit layer and the electron supply layer;
- an anode electrode that forms a Schottky junction with the second electron transit layer;
- and
- a cathode electrode that forms an ohmic junction with the second electron transit layer, wherein
- the anode electrode is connected to a source of the transistor, and
- the cathode electrode is connected to a drain of the transistor.
A semiconductor device, comprising:
- a substrate;
- a buffer layer formed over the substrate;
- a second electron transit layer formed over the buffer layer;
- an insulating layer formed over the second electron transit layer;
- a first electron transit layer formed over the insulating layer;
- an electron supply layer formed over the first electron transit layer;
- and
- a cap layer formed over the electron supply layer.
A semiconductor device, comprising:
- a substrate;
- a buffer layer formed over the substrate;
- a first electron transit layer formed over the buffer layer;
- an electron supply layer formed over the first electron transit layer;
- a cap layer formed over the electron supply layer;
- an insulating layer formed over the cap layer;
- and
- a second electron transit layer formed over the insulating layer.
Dependencies are inferred from the claim text.