Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof

A method for manufacturing a nanowire TFET with vertical structure, comprising the following steps:

• provide a heavily-doped p-type semiconductor substrate;
• develop a ZnO gate seed crystal layer on a specific region of the substrate;
• develop a ZnO nanowire in water bath using the gate seed crystal layer formed as the solid-state source;
• form a first insulation film around the ZnO nanowire and the substrate;
• form a heavily-doped polycrystalline silicon layer through deposition on the first insulation film;
• etch the formed polycrystalline silicon layer and the first insulation film to expose the ZnO nanowire;
• define the gate electrode pattern on the formed polycrystalline silicon layer;
• form a second insulation film, and etch the second insulation film to expose the top of the ZnO nanowire;
• use the top of the exposed ZnO nanowire as the drain of the device, which contacts with metal to form a drain electrode;
• form a third insulation film, and etch the third insulation film to form a through-hole, and use a layer of metal to extract the drain electrode and gate electrode.