Epitaxial wafer for light-emitting diodes
AssigneeShowa Denko K.K.
InventorsNoriyoshi Seo, Atsushi Matsumura, Ryouichi Takeuchi
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Abstract
The present invention relates to an epitaxial wafer for a light-emitting diode wherein the peak emission wavelength is 655 nm or more, and it is possible to improve reliability. The epitaxial wafer for light-emitting diodes includes a GaAs substrate (1) and a pn-junction type light-emitting unit (2) provided on the GaAs substrate (1), wherein light-emitting unit (2) is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and the composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3≦X≦0.7, 0.51≦Y≦0.54).
Claims16
An epitaxial wafer for a light-emitting diode, comprising a GaAs substrate, a pn junction-type light-emitting unit provided on the GaAs substrate,
- wherein the light-emitting unit is formed as a multilayer structure in which a strained light-emitting layer and a barrier layer are alternately stacked, and
- a composition formula of the barrier layer is (AlXGa1-X)YIn1-YP (0.3≦X≦0.7, 0.51≦Y≦0.54).
Dependencies are inferred from the claim text.