Coalesced nanowire structures with interstitial voids and method for manufacturing the same

A method of making a semiconductor device, comprising:

• epitaxially growing plurality of first conductivity type semiconductor nanowire cores from portions of a semiconductor surface of a support exposed through openings in an insulating mask layer on the support;
• forming semiconductor active region shells on the cores;
• growing a continuous second conductivity type semiconductor layer extending over and around the cores and the shells, such that a plurality of interstitial voids are formed in the second conductivity type semiconductor layer extending between the cores during the step of growing;
• and
• forming a first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.