Nonvolatile memory element and method for manufacturing same
AssigneePanasonic Corporation
InventorsYoshio Kawashima, Takumi Mikawa
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Abstract
The method includes: forming a lower electrode layer above a substrate; forming a variable resistance layer on the lower electrode layer; forming an upper electrode layer on the variable resistance layer; forming a hard mask layer on the upper electrode layer; forming a photoresist mask on the hard mask layer; forming a hard mask by performing etching on the hard mask layer using the photoresist mask; and forming a nonvolatile memory element by performing etching on the upper electrode layer, the variable resistance layer, and the lower electrode layer, using the hard mask. In the forming of a photoresist mask, the photoresist mask is formed to have corner portions which recede toward the center portion in planar view.
Claims16
A method of manufacturing a nonvolatile memory element having variable resistance, the method comprising:
- forming a lower electrode layer above a substrate;
- forming a variable resistance layer on the lower electrode layer, the variable resistance layer comprising an oxygen-deficient transition metal oxide;
- forming an upper electrode layer on the variable resistance layer;
- forming a hard mask layer on the upper electrode layer;
- forming a photoresist mask on the hard mask layer, the photoresist mask having a rounded shape in a planar view;
- forming a hard mask by performing etching on the hard mask layer, using the photoresist mask;
- and
- forming a nonvolatile memory element including the upper electrode layer, the variable resistance layer, and the lower electrode layer, by performing etching, using the hard mask, on the upper electrode layer, the variable resistance layer, and the lower electrode layer, with an etching gas that contains an oxygen deficiency-suppressing gas, the nonvolatile memory element having a rounded shape in planar view.
A nonvolatile memory element having variable resistance, comprising:
- a lower electrode layer formed above a substrate;
- a variable resistance layer formed on the lower electrode layer, the variable resistance layer comprising a transition metal oxide;
- and
- an upper electrode layer formed on the variable resistance layer,
- wherein each of the upper electrode layer, the variable resistance layer, and the lower electrode layer has a rounded shape in planar view, and
- the variable resistance layer has sides to which a component included in an oxygen deficiency-suppressing gas adheres, the oxygen deficiency-suppressing gas being contained in an etching gas used in forming of the upper electrode layer, the variable resistance layer, and the lower electrode layer.
Dependencies are inferred from the claim text.