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US 2013/0092884 A1Published application
Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
AssigneeE.I. du Pont de Nemours and Company
InventorsKENNETH WARREN HANG, Yueli Wang
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Abstract
The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
Claims13
A thick film paste composition comprising:
- (a) 35-55 wt % Ag;
- (b) 0.5-5 wt % Pb-free bismuth-tellurium-oxide;
- and
- (c) an organic medium;
- wherein said Ag and said bismuth-tellurium-oxide are dispersed in said organic medium and wherein said wt % are based on the total weight of said paste composition, said bismuth-tellurium oxide comprising 22-42 wt % Bi2O3 and 58-78 wt % TeO2, based on the total weight of said bismuth-tellurium oxide.
2 more elements
Dependencies are inferred from the claim text.