Tantalum Sputtering Target
AssigneeJX Nippon Mining & Metals Corporation
InventorsShinichiro Senda, Atsushi Fukushima
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Abstract
Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).
Claims18
A tantalum sputtering target, wherein 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and the purity excluding boron and gas components is 99.998% or higher.
A tantalum sputtering target, wherein 10 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and the purity excluding boron and gas components is 99.998% or higher.
A tantalum sputtering target, wherein 10 mass ppm or more and 20 mass ppm or less of boron is contained as an essential component, and the purity excluding boron and gas components is 99.998% or higher.
Dependencies are inferred from the claim text.