Gan based group iii-v nitride semiconductor light-emitting diode and method for fabricating the same

A light-emitting device comprising:

• a high-resistant substrate;
• first and second electrodes arranged with the high-resistant substrate therebetween;
• and
• a material layer formed for lasing between the high-resistant substrate and the second electrode,
• wherein a region of the high-resistant substrate is removed, and the first electrode contacts the material layer through the removed region of the high-resistant substrate.

A light-emitting device comprising:

• an active layer in which light is emitted;
• first and second material layers with the active layer therebetween, the first and second material layers are for inducing laser emission in the active laser by lasing;
• a first electrode formed in contact with the lowermost layer of the first material layers;
• a second electrode formed in contact with the uppermost layer of the second material layers in a restricted manner;
• and
• a heat-dissipating element displaced in contact with the lowermost layer of the first material layers for effective heat dissipation.