Voltage reference circuit
AssigneeSeiko Instruments Inc.
InventorsTaro YAMASAKI, Fumiyasu UTSUNOMIYA
Life of this patent
Estimating the term…
Abstract
The voltage reference circuit includes: a first MOS transistor; a second MOS transistor including a gate terminal connected to a gate terminal of the first MOS transistor and having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value and a K value of the first MOS transistor; a current mirror circuit flowing a current based on a difference between the absolute values of the threshold values of the first MOS transistor and the second MOS transistor; a third MOS transistor flowing the current; and a fourth MOS transistor having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value of the third MOS transistor and flowing the current.
Claims3
A voltage reference circuit comprising:
- a first MOS transistor including a source terminal connected to a first power supply terminal;
- a second MOS transistor including a source terminal connected to the first power supply terminal and a gate terminal connected to a gate terminal of the first MOS transistor, the second MOS transistor having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value and a K value of the first MOS transistor;
- a current mirror circuit flowing a current based on a difference between the absolute values of the threshold values of the first MOS transistor and the second MOS transistor;
- a third MOS transistor flowing the current of the current mirror circuit;
- and
- a fourth MOS transistor having an absolute value of a threshold value and a K value higher than an absolute value of a threshold value and a K value of the third MOS transistor and flowing the current of the current mirror circuit,
- wherein the voltage reference circuit outputs, as a reference voltage, a constant voltage based on the absolute values of the threshold values and the K values of the third MOS transistor and the fourth MOS transistor.
Dependencies are inferred from the claim text.