Semiconductor Device and Method of Forming Interconnect Substration for FO-WLCSP

A method of making a semiconductor device, comprising:

• forming an interconnect substrate having a plurality of conductive structures extending through the interconnect substrate;
• providing a first carrier;
• mounting the interconnect substrate over the first carrier;
• mounting a plurality of first semiconductor die over the first carrier adjacent to the interconnect substrate;
• depositing a first encapsulant over the first semiconductor die, interconnect substrate, and first carrier;
• and
• forming a first interconnect structure over a first surface of the first encapsulant and electrically connected to the conductive structures of the interconnect substrate.

A method of making a semiconductor device, comprising:

• forming an interconnect substrate having a plurality of conductive structures;
• disposing a first semiconductor die adjacent to the interconnect structure;
• depositing a first encapsulant over the first semiconductor die and interconnect substrate;
• and
• forming a first interconnect structure over a first surface of the first encapsulant and electrically connected to the conductive structures of the interconnect substrate.

A semiconductor device, comprising:

• an interconnect substrate having a plurality of conductive structures;
• a first semiconductor die disposed adjacent to the interconnect structure;
• an encapsulant deposited over the first semiconductor die and interconnect substrate;
• and
• a first interconnect structure formed over a first surface of the encapsulant and electrically connected to the conductive structures of the interconnect substrate.