Power Semiconductor Module with Integrated Thick-Film Printed Circuit Board

A power semiconductor module, comprising:

• a first printed circuit board having a first insulation carrier, and a first upper metallization and a first lower metallization applied to the first insulation carrier on mutually opposite sides;
• a second printed circuit board having a second insulation carrier and a second upper metallization applied to the second insulation carrier, the second printed circuit board being spaced apart from the first printed circuit board in a vertical direction oriented perpendicular to the opposite sides of the first insulation carrier;
• a semiconductor chip disposed between the first printed circuit board and the second printed circuit board and electrically conductively connected at least to the second upper metallization;
• wherein the first lower metallization and the second upper metallization face one another;
• and
• wherein the first printed circuit board comprises a first thick conductor layer at least partly embedded in the first insulation carrier and which has a thickness of at least 100 μm.