Semiconductor substrate, eletronic device and method for manufacturing the same

A method for manufacturing a semiconductor substrate having a vertical conductor and an insulating layer, comprising an insulating layer forming process and a vertical conductor forming process,

• the insulating layer forming process including the steps of:
• forming a hole or groove in the semiconductor substrate along its thickness direction;
• pouring a suspension having silica particles dispersed in a volatile organic solvent into the hole or groove;
• pouring a liquid silica or liquid Si compound into the hole or groove for infiltration into a space between the silica particles;
• and
• performing a heat treatment to promote conversion of the infiltrated liquid silica or liquid Si compound to silica, the heat treatment including the steps of heating the contents of the hole or groove under a pressure and then cooling them under a pressure,
• the vertical conductor forming process including the steps of:
• forming a vertical hole within an area surrounded by the insulating layer to extend along the thickness direction of the semiconductor substrate;
• and
• forming a vertical conductor including a metal/alloy component of a nanocomposite crystal structure within the vertical hole.