Semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorsAkio IWABUCHI, Hironori AOKI
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Abstract
A semiconductor device is free from degradation of characteristics attributable to a manufacturing process thereof and its characteristics are hardly affected by changes in electric potentials of bonding pads. The semiconductor device 10 includes an active region 12, a first insulating layer 13 covering the active region 12, a floating conductor 14 formed on the first insulating layer 13, a second insulating layer 15 formed on the first insulating layer 13 and the floating conductor 14, a bonding pad 18 formed on the second insulating layer 17 and interconnection vias 19, 20 for electrically connecting the active region 12 and the bonding pad 18.
Claims7
A semiconductor device comprising:
- an active region;
- a first insulating layer covering the active region;
- a floating conductor formed on the first insulating layer;
- a second insulating layer formed on the first insulating layer and the floating conductor;
- a bonding pad formed on the second insulating layer;
- and
- an interconnection via for electrically connecting the active region and the bonding pad.
Dependencies are inferred from the claim text.