Semiconductor Device Having Electrode/Film Opening Edge Spacing Smaller Than Bonding Pad/Electrode Edge Spacing

A semiconductor device comprising:

• a substrate;
• a bonding pad positioned over the substrate, the bonding pad having a first footprint defined by a first pair of parallel ends extending in a first direction and connecting to a second pair of parallel ends extending in a second direction which crosses the first direction;
• a first film formed over at least a portion of the bonding pad;
• an opening formed in the first film, the opening having a second footprint defined by a third pair of parallel ends extending in the first direction and connecting to a fourth pair of parallel ends extending in the second direction, the second footprint being entirely within the first footprint;
• and
• an electrode layer positioned over at least a portion of the bonding pad including over the opening, the electrode layer having a third footprint defined by a fifth pair of parallel ends extending in the first direction which connect to a sixth pair of parallel ends extending in the second direction;
• wherein:
• the third footprint of the electrode layer is entirely within the first footprint of the bonding pad;
• the second footprint of the opening is entirely within the third footprint of the electrode layer;
• and
• a first spacing (L1) between a first end of the fifth pair and a first end of the third pair is less than a second spacing (L2) between the first end of the fifth pair and a first end of the first pair.