Back to results
US 2013/0075910 A1Published application
MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS
AssigneeTexas Instruments Incorporated
InventorsGregory Charles Herdt, Joseph W. Buckfeller
Life of this patent
Estimating the term…
Abstract
A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N2 gas flow to the nitrogen plasma, resulting in a Ti:N stoichiometry between 1:2.1 to 1:2.3. TiN films thicker than 40 nanometers without cracks are attained by the disclosed process.
Claims5
An integrated circuit (IC), comprising:
- a semiconductor substrate;
- and
- a multi-layer TiN film, including:
- a first TiN layer with a first grain structure formed on a top surface of said semiconductor substrate;
- a second TiN layer with a second grain structure and with less tensile stress than said first TiN layer formed on a top surface of said first TiN layer;
- and
- a third TiN layer with a third grain structure formed on a top surface of said second TiN layer.
4 more elements
Dependencies are inferred from the claim text.