Semiconductor device including metal-containing conductive line and method of manufacturing the same
OwnerJae-hwa PARK, Man-sug KANG +2inventors
InventorsJae-hwa PARK, Man-sug KANG, Hee-sook PARK, Woong-hee SOHN
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Abstract
A semiconductor device includes: a semiconductor substrate having a trench therein, a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction, and a metal-containing conductive line on the metal-containing barrier layer in the wiring space, and including at least one metal grain having a particle diameter of about the first width along the first direction.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a trench therein;
- a metal-containing barrier layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction;
- and
- a metal-containing conductive line on the metal-containing barrier layer in the wiring space, and including at least one metal grain having a particle diameter of about the first width along the first direction.
A method of fabricating a semiconductor device, the method comprising:
- forming a metal-containing stacked structure on a substrate, the metal-containing stacked structure including:
- at least two seed layers, and
- at least one metal layer disposed between the at least two seed layers and including a plurality of metal grains;
- etching a part of the metal-containing stacked structure to form a metal-containing wiring pattern that includes a remaining part of the metal-containing stacked structure;
- and
- annealing the metal-containing wiring pattern.
A method of fabricating a semiconductor device, the method comprising:
- forming a trench in a semiconductor substrate;
- forming a lower layer extending along an inner wall of the trench and defining a wiring space in the trench, the wiring space having a first width along a first direction;
- forming a metal-containing stacked structure, the metal-containing stacked structure including:
- a plurality of seed layers extending along the inner wall of the trench on the lower layer, and
- at least one metal layer extending along the inner wall of the trench on one of the plurality of seed layers and having a plurality of metal grains, each of the plurality of metal grains having a particle diameter less than ½ of the first width in the first direction;
- etching a part of the metal-containing stacked structure to form a metal-containing wiring pattern that includes a remaining part of the metal-containing stacked structure;
- and
- increasing sizes of at least some of the plurality of metal grains in the metal-containing wiring pattern.
Dependencies are inferred from the claim text.