Back to results
US 2013/0075906 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorKeita Matsuda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a foundation layer that is provided on a substrate and is electrically conductive; a nickel layer provided on the foundation layer; and a solder provided on the nickel layer, the nickel layer having a first region on a side of the foundation layer and a second region on a side of the solder, the second region being harder than the first region.
Claims17
A semiconductor device comprising:
- a foundation layer that is provided on a substrate and is electrically conductive;
- a nickel layer provided on the foundation layer;
- and
- a solder provided on the nickel layer,
- the nickel layer having a first region on a side of the foundation layer and a second region on a side of the solder,
- the second region being harder than the first region.
3 more elements
A method for manufacturing a semiconductor device comprising:
- forming a foundation layer on a substrate;
- providing a nickel layer, of which upper face side is harder than lower face side, on the foundation layer;
- and
- providing a solder on the nickel layer.
1 more element
Dependencies are inferred from the claim text.