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US 2013/0075896 A1Published application
Semiconductor device, manufacturing method thereof, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsTsuyoshi YODA, Kazumi HARA
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Abstract
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
Claims6
A semiconductor device, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to each other;
- a through hole provided in the semiconductor substrate;
- and
- a through electrode with a bump electrode provided in the through hole including a resin having a protrusion from the second surface of the semiconductor substrate and a conductive film covering a part of the resin.
1 more element
Dependencies are inferred from the claim text.