Stacked semiconductor device

A stacked semiconductor device, comprising:

• a first semiconductor package including:
• a first wiring substrate;
• a first semiconductor element mounted on the first wiring substrate;
• and
• multiple first connection terminals formed on a surface of the first wiring substrate;
• a second semiconductor package including:
• a second wiring substrate;
• a second semiconductor element mounted on the second wiring substrate;
• and
• multiple second connection terminals formed on a surface of the second wiring substrate,
• the second semiconductor package being disposed so as to be stacked on the first semiconductor package via the multiple second connection terminals;
• and
• a heat dissipating member, which is configured to:
• be disposed between the first semiconductor package and the second semiconductor package;
• be brought into thermal contact with both of the first semiconductor package and the second semiconductor package;
• have openings formed therein at locations corresponding to the multiple second connection terminals so as not to be in contact with the multiple second connection terminals;
• and
• be formed so as to hang over outer peripheral portions of a pair of the first semiconductor package and the second semiconductor package,
• wherein the heat dissipating member is brought into surface contact with the corresponding wiring substrate of one semiconductor package of the pair of the first semiconductor package and the second semiconductor package and is brought into surface contact with the corresponding semiconductor element of another semiconductor package thereof, and
• wherein the multiple first connection terminals and the multiple second connection terminals comprise ball electrodes, and the openings are each formed in a tapered shape which gradually widens from the one semiconductor package side toward the another semiconductor package side.