Semiconductor device having lateral element

A semiconductor device having a lateral element, the semiconductor device comprising:

• a semiconductor substrate including a first conductivity-type semiconductor layer;
• a first electrode located on a surface of the semiconductor layer;
• a second electrode located on the surface of the semiconductor layer;
• and
• a resistive field plate extending from the first electrode toward the second electrode, wherein
• the lateral element passes an electric current between the first electrode and the second electrode,
• a voltage applied to the second electrode is less than a voltage applied to the first electrode,
• the resistive field plate has a first end portion and a second end portion opposite to the first end portion,
• the second end portion of the resistive field plate is located closer to the second electrode than the first end portion of the resistive field plate, and
• a concentration of a first impurity in the second end portion is equal to or greater than 1×1018 cm−3.