Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
AssigneeShindengen Electric Manufacturing Co., Ltd.
InventorsAtsushi Ogasawara, Kazuhiko Ito, Koji Ito
Life of this patent
Estimating the term…
Abstract
Provided is a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiO2 falls within a range of 32 mol % to 48 mol %, a content of Al2O3 falls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of B2O3 falls within a range of 3 mol % to 10 mol %.
Claims12
A glass composition for protecting a semiconductor junction, wherein the glass composition contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K.
A method of manufacturing a semiconductor device comprising:
- a first step of preparing a semiconductor element having a pn junction exposure part where a pn junction is exposed;
- and
- a second step of forming a glass layer such that the glass layer covers the pn junction exposure part in this order, wherein
- in the second step, the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K.
A semiconductor device comprising:
- a semiconductor element having a pn junction exposure part where a pn junction is exposed;
- and
- a glass layer which is formed such that the glass layer covers the pn junction exposure part, wherein
- the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and substantially contains none of Pb, P, As, Sb, Li, Na and K.
Dependencies are inferred from the claim text.