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US 2013/0075859 A1Published application
Semiconductor structure including guard ring
AssigneeInfineon Technologies AG
InventorMartin Kerber
Life of this patent
Estimating the term…
Abstract
One or more embodiments related to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer guard ring and the conductive feature, the inner guard ring being electrically coupled to the conductive feature.
Claims35
A semiconductor structure, comprising:
- a conductive feature;
- an outer guard ring;
- and
- an inner guard ring between said outer guard ring and said conductive feature, said outer guard ring being at the same voltage as said conductive feature.
1 more element
A semiconductor structure, comprising:
- a conductive feature;
- an outer guard ring;
- and
- an inner guard ring between said outer guard ring and said conductive feature, said inner guard ring being electrically coupled to said conductive feature.
1 more element
A semiconductor structure, comprising:
- a dielectric layer said dielectric layer having a corrupted portion;
- a conductive feature disposed in said dielectric layer, said conductive feature being at a first voltage;
- and
- an outer guard ring disposed in said dielectric layer, said outer guard ring being at a second voltage different from said first voltage,
- wherein there is substantially no lateral electric field within said contaminated portion.
2 more elements
A semiconductor structure, comprising:
- a dielectric layer said dielectric layer having a corrupted portion;
- a conductive feature disposed in said dielectric layer, said conductive feature being at a first voltage;
- and
- an outer guard ring disposed in said dielectric layer, said outer guard ring being at a second voltage different from said first voltage,
- wherein there is substantially no lateral electric field proximate said conductive feature.
2 more elements
Dependencies are inferred from the claim text.