Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsGa Young HA, Ki Seon PARK
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming plural layers of a MTJ device, depositing a conductive layer over the plural layers, forming a hard mask pattern used for patterning the plural layers over the conductive layer, where the conductive layer is exposed through the hard mask pattern, performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer, and patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device.
Claims17
A method for manufacturing a semiconductor device, comprising:
- forming plural layers of a magnetic tunnel junction (MTJ) device;
- depositing a conductive layer over the plural layers;
- forming a hard mask pattern used for patterning the plural layers over the conductive layer, wherein the conductive layer is exposed through the hard mask pattern;
- performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer;
- and
- patterning the plural layers by using the hard mask pattern as an etch mask to form the MTJ device.
A method for manufacturing a semiconductor device, comprising:
- forming a pinned layer, a tunnel insulating layer, a conductive layer, and a free layer to form a magnetic tunnel junction (MTJ) device;
- forming a hard mask pattern over the free layer;
- patterning the free layer by using the hard mask pattern as an etch mask to form a free layer pattern and expose the conductive layer through the free layer pattern;
- performing hydrogen peroxide process to volatilize the exposed conductive layer and removing the volatilized conductive layer;
- and
- patterning the pinned layer and the tunnel insulating layer by using the hard mask pattern as an etch mask to form the MTJ device.
A semiconductor device, comprising:
- a magnetic tunnel junction (MTJ) device;
- a conductive pattern arranged over the MTJ device;
- a metal layer pattern arranged over the conductive pattern;
- and
- a metal nitride layer arranged on side surfaces of the metal layer pattern.
Dependencies are inferred from the claim text.