Method and structure for a mram device with a bilayer passivation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Ming Chen, Chung-Yi Yu, Cheng-Yuan Tsai, Kai-Wen Cheng
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Abstract
The present disclosure provides a magnetoresistive random access memory (MRAM) device. The MRAM device includes a magnetic tunnel junction (MTJ) stack on a substrate; and a dual-layer passivation layer disposed around the MTJ stack. The dual-layer passivation layer includes an oxygen-free film formed adjacent sidewalls of the MTJ stack; and a moisture-blocking film formed around the oxygen-free film.
Claims21
A magnetoresistive random access memory (MRAM) device comprising:
- a magnetic tunnel junction (MTJ) stack on a substrate;
- and
- a dual-layer passivation layer disposed around the MTJ stack, the dual-layer passivation layer including:
- an oxygen-free film formed adjacent sidewalls of the MTJ stack, and
- a moisture-blocking film formed around the oxygen-free film.
A magnetoresistive random access memory (MRAM) device comprising:
- a magnetic tunnel junction (MTJ) stack disposed on a bottom electrode;
- and
- a dual-layer passivation layer disposed around the MTJ stack, the dual-layer passivation layer including:
- an oxygen-free dielectric film formed around the MTJ stack;
- and
- a moisture-barrier layer formed around the oxygen-free film, wherein the moisture-barrier layer includes a metal oxide.
A method of fabricating a magnetoresistive random access memory (“MRAM”) cell, comprising:
- forming a magnetic tunnel junction (“MTJ”) stack on a bottom electrode;
- forming an oxygen-free film around the MTJ stack;
- and
- forming a moisture-barrier layer around the oxygen-free film;
- wherein the oxygen-free film and the moisture-barrier layer are configured as a dual-passivation layer to protect the MTJ stack from moisture.
Dependencies are inferred from the claim text.