Process for producing a conducting electrode

A process for producing a conducting electrode on a substrate comprising:

• depositing a dielectric interface base layer on the substrate;
• deposition of depositing a layer in sacrificial polysilicon;
• producing drain and source areas;
• production of producing a damascene cavity by removal of the sacrificial polysilicon;
• depositing a layer produced in a dielectric material, said dielectric material being a high-k type material;
• depositing on the dielectric layer a protective layer made of the nitride of a metal;
• depositing on the protective layer a functionalization layer, the functionalization layer made of a material comprising a chemical species such that the free enthalpy of formation of a nitride of said species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal of said protective layer over a temperature range of between 0 and 1200° C., said chemical species being chosen from among the following species:
• Mg or Ca;
• depositing on the functionalization layer a capping layer, the capping layer capable of protecting the functionalization layer from oxidation, said capping layer undergoing said annealing;
• depositing a metallic material to fill in the remainder of the damascene cavity;
• annealing the assembly comprising said protective layer and said functionalization layer such that the species partially diffuse from said functionalization layer into said protective layer and the nitrogen atoms partially migrate from said protective layer into said functionalization layer, said conducting electrode including said protective and functionalization layers after annealing.

A process for producing a conducting electrode on a substrate comprising:

• deposition of the depositing a dielectric interface base layer on the substrate;
• deposition depositing on the dielectric interface base layer a layer produced in a dielectric material, said dielectric material being a high-k type material;
• depositing on the dielectric layer a protective layer made of the nitride of a metal;
• depositing a layer in sacrificial polysilicon;
• producing drain and source areas;
• producing a damascene cavity by removal of the sacrificial polysilicon with a stop on the protective layer;
• depositing on the protective layer a functionalization layer, the functionalization layer made of a material comprising a chemical species such that the free enthalpy of formation of a nitride of said species is less, in absolute value, than the free enthalpy of formation of the nitride of the metal of said protective layer over a temperature range of between 0 and 1200° C., said chemical species being chosen from among the following species:
• Mg or Ca;
• depositing on the functionalization layer a capping layer, the capping layer capable of protecting the functionalization layer from oxidation, said capping layer undergoing said annealing;
• depositing a metallic material to fill in the remainder of the damascene cavity;
• annealing the assembly comprising said protective layer and said functionalization layer such that the species partially diffuse from said functionalization layer into said protective layer and the nitrogen atoms partially migrate from said protective layer into said functionalization layer, said conducting electrode including said protective and functionalization layers after annealing.