Metal gate stack having tialn blocking/wetting layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Szu-An Wu, Ying-Lang Wang, Chi-Wen Liu
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Abstract
A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.
Claims20
An integrated circuit device comprising:
- a semiconductor substrate;
- and
- a gate stack disposed over the semiconductor substrate, wherein the gate stack includes:
- a gate dielectric layer disposed over the semiconductor substrate,
- a work function layer disposed over the gate dielectric layer,
- a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer, and
- a conductive layer disposed over the multi-function wetting/blocking layer.
An integrated circuit device comprising a gate stack disposed over a semiconductor substrate, wherein the gate stack includes:
- a high-k dielectric layer disposed over the semiconductor substrate;
- a work function layer disposed directly on the high-k dielectric layer;
- a titanium aluminum nitride layer disposed directly on the work function layer;
- and
- an aluminum layer disposed directly on the titanium aluminum nitride layer.
A method comprising:
- forming a gate structure over a semiconductor substrate, wherein the gate structure has a gate stack that includes a high-k dielectric layer disposed over the semiconductor substrate and a dummy gate disposed over the high-k dielectric layer;
- removing the dummy gate from the gate structure, thereby forming an opening;
- and
- forming a work function layer over the high-k dielectric layer, a multi-function wetting/blocking layer over the work function layer, and a conductive layer over the multi-function wetting/blocking layer, wherein the work function layer, the multi-function wetting/blocking layer, and the conductive layer fill the opening, and further wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer.
Dependencies are inferred from the claim text.