Lateral double diffused metal oxide semiconductor device and method for manufacturing the same

An apparatus comprising:

• a source formed over a substrate and having a source fingertip portion;
• a drain formed over the substrate and having a source fingertip portion;
• a gate formed over the substrate at a location between the source and the drain;
• a plurality of internal field rings formed in a first corner region between the source fingertip portion and the drain and in a second corner region between the drain fingertip portion and the source.

A method for manufacturing an apparatus which has a source and a drain separately arranged on respective sides of a substrate with a gate interposed therebetween, the method comprising:

• implanting first condition type impurity ions on the substrate corresponding to a strip region that excludes a corner region having a fingertip of the source and a fingertip of the drain to form a drift region;
• forming a field oxide film on the substrate corresponding to the corner region;
• and
• implanting the first condition type impurity ions and second condition type impurity ions in the corner region to form a plurality of internal field rings coupled to each other,
• wherein each of the internal field rings includes a region formed of the second conduction type impurity ions inside a region formed of the first conduction type impurity ions.