Semiconductor device

A semiconductor device comprising:

• a semiconductor body;
• first and second semiconductor pillars each projecting from the semiconductor body apart from each other to define a groove therebetween, the first and second semiconductor pillars including first and second side surfaces, respectively, the first and second side surfaces facing to each other with an intervention of the groove therebetween, the first side surface of the first semiconductor pillar defining a first channel region, the second side surface of the second semiconductor pillar defining a second channel region;
• a first gate insulating film formed on the first channel region;
• a second gate insulating film formed on the second channel region;
• first and second gate electrodes formed on the first and second gate insulating films, respectively, in the groove, the first and second gate electrodes including third and fourth side surfaces facing to each other with an intervention of a part of the groove therebetween;
• an insulating layer filling the part of the groove;
• and
• a liner insulating film inserted between the insulating layer and each of the third and fourth side surfaces of the first and second gate electrodes, the liner insulating film comprising a silicon oxynitride film.

A semiconductor device comprising:

• a semiconductor body;
• first and second semiconductor pillars each projecting from the semiconductor body apart from each other, the first and second semiconductor pillars being arranged in line in a first direction, the first semiconductor pillar including a first top surface and a first side surface extending from the first top surface downwardly to the semiconductor body, the second semiconductor pillar including a second top surface and a second side surface extending from the second top surface downwardly to the semiconductor body;
• a first common gate electrode line extending in the first direction to include first and second portions, the first portion of the first common gate electrode line covering the first side surface of the first semiconductor pillar with an intervention of a first gate insulating film therebetween, the second portion of the first common gate electrode line covering the second side surface of the second semiconductor pillar with an intervention of a second gate insulating film therebetween;
• an insulating layer covering the first common gate electrode line;
• and
• a liner insulating film inserted between the first common gate electrode line and the insulating layer, the liner insulating film comprising a silicon oxynitride film.