Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device

A method for manufacturing a nonvolatile semiconductor storage device, comprising:

• forming a first stacked body with a plurality of electrode layers and a plurality of first insulating layers alternately stacked layer by layer on a substrate, and forming a second stacked body including a select gate and a second insulating layer above the first stacked body;
• forming a through hole including a first portion penetrating through the first stacked body in stacking direction, a second portion communicating with the first portion and penetrating through the select gate in the stacking direction, and a third portion communicating with the second portion and penetrating through the second insulating layer in the stacking direction;
• forming a memory film on a sidewall of the first portion, forming a gate insulating film on a sidewall of the second portion and a sidewall of the third portion, and forming a channel body inside the memory film and inside the gate insulating film;
• forming a third insulating layer including silicon oxide inside the channel body and occluding with the third insulating layer a boundary portion between the second portion and the third portion in the through hole;
• forming a first embedded portion including silicon above the boundary portion inside the third portion;
• exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion;
• and
• embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.