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US 2013/0075800 A1Published application
Semiconductor device manufacturing method, semiconductor device and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsSadayoshi Horii, Hideharu Itatani
Life of this patent
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Abstract
A semiconductor device manufacturing method includes loading a substrate to a processing chamber, a gate insulating film or a capacitor insulating film being formed on a surface of the substrate; forming an electrode, which includes a conductive oxide film and to which an additive that modulates a work function of the conductive oxide film is added, on the substrate; and unloading the substrate, on which the electrode is formed, from the processing chamber.
Claims20
A semiconductor device manufacturing method comprising:
- loading a substrate to a processing chamber, a gate insulating film or a capacitor insulating film being formed on the substrate;
- forming an electrode, which includes a conductive oxide film and to which an additive that modulates a work function of the conductive oxide film is added, on the substrate;
- and
- unloading the substrate, on which the electrode is formed, from the processing chamber.
1 more element
A semiconductor device, comprising:
- a gate insulating film or a capacitor insulating film that is formed on a substrate;
- and
- an electrode including a conductive oxide film that is formed to come into contact with the gate insulating film or the capacitor insulating film,
- wherein an additive that modulates a work function of the conductive oxide film is included in the conductive oxide film.
1 more element
A substrate processing apparatus, comprising:
- a processing chamber that accommodates a substrate, a gate insulating film or a capacitor insulating film being formed on a surface of the substrate;
- a raw material gas supply system that supplies plural raw material gases to the processing chamber;
- and
- a controller that controls the raw material gas supply system to form an electrode, which includes a conductive oxide film to which an additive modulating a work function of the conductive oxide film is added, on the substrate by exposing the substrate to the plural raw material gases.
1 more element
Dependencies are inferred from the claim text.