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US 2013/0075797 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKimitoshi OKANO
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Abstract
In one embodiment, a semiconductor device includes a semiconductor substrate, and a fin disposed on a surface of the semiconductor substrate and having a side surface of a (110) plane. The device further includes a gate insulator disposed on the side surface of the fin, and a gate electrode disposed on the side surface and an upper surface of the fin via the gate insulator. The device further includes a plurality of epitaxial layers disposed on the side surface of the fin in order along a height direction of the fin.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a fin disposed on a surface of the semiconductor substrate, and having a side surface of a (110) plane;
- a gate insulator disposed on the side surface of the fin;
- a gate electrode disposed on the side surface and an upper surface of the fin via the gate insulator;
- and
- a plurality of epitaxial layers disposed on the side surface of the fin in order along a height direction of the fin.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a fin having a side surface of a (110) plane on a surface of a semiconductor substrate;
- forming a gate electrode on a side surface and an upper surface of the fin via a gate insulator formed on the side surface of the fin;
- covering the fin with an insulator;
- and
- forming a plurality of epitaxial layers on the side surface of the fin in order along a height direction of the fin, by alternately repeating processing of reducing a height of an upper surface of the insulator and processing of forming an epitaxial layer on the side surface of the fin.
2 more elements
Dependencies are inferred from the claim text.