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US 2013/0075796 A1Published application
Semiconductor device and fabrication method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Chieh TSAI, Yung-Che Albert SHIH, Jyh-Kang TING
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Abstract
A method of fabricating a semiconductor device is disclosed. A dummy gate feature is formed between two active gate features over a substrate. An isolation structure is in the substrate and the dummy gate feature is over the isolation structure. In at least one embodiment, a non-conductive material is used for forming the dummy gate feature to replace a sacrificial gate electrode.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a first and a second sacrificial gate stacks over a substrate;
- removing at least a portion of the first sacrificial gate stack to form a first opening;
- forming a dummy gate electrode in the first opening using a non-conductive material;
- removing at least a portion of the second sacrificial gate stack to form a second opening;
- and
- forming a gate electrode in the second opening using a conductive material.
3 more elements
A method of fabricating a semiconductor device, comprising:
- forming a first, a second, and a third poly-silicon gate electrodes over a substrate, wherein the first poly-silicon gate electrode is positioned between the second and the third poly-silicon gate electrodes;
- forming an inter-layer dielectric (ILD) around and over the first, the second, and the third poly-silicon gate electrodes;
- planarizing the ILD to form a planarized ILD with a surface substantially co-planar with the top surface of the first, the second, and the third poly-silicon gate electrodes;
- removing the first poly-silicon gate electrode to form a first opening;
- filling a dielectric material in the first opening to form a dummy gate electrode;
- removing the second and the third poly-silicon gate electrodes to form a second and a third openings;
- forming a first metal gate electrode in the second opening for a first transistor;
- and
- forming a second metal gate electrode in the third opening for a second transistor.
6 more elements
A semiconductor device, comprising:
- a conductive gate feature and a non-conductive gate feature formed over a substrate;
- a pair of spacers adjoining each sidewalls of the conductive gate feature and the non-conductive gate feature;
- and
- an isolation structure under the non-conductive gate feature in the substrate.
1 more element
Dependencies are inferred from the claim text.