Semiconductor including lateral hemt

A lateral HEMT, comprising:

• a substrate
• a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate;
• a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer;
• a third layer, wherein the third layer has a semiconductor material and is arranged at least partially in the substrate;
• wherein the lateral HEMT has a first electrode, a second electrode and a gate electrode;
• wherein the first electrode extends vertically from the second layer to the third layer, and the second electrode extends vertically from the second layer partially into the substrate;
• and
• wherein the semiconductor material of the third layer has a second conduction type, which is complementary to the first conduction type, and the substrate has a semiconductor material of the first conduction type.

A method for production of a power semiconductor including a lateral HEMT, comprising:

• providing a substrate, and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate, a second layer, wherein the second layer has a semiconductor material and is arranged at least partially on the first layer, and a passivation layer, wherein the passivation layer is arranged at least partially on the second layer;
• partially removing the first layer, of the second layer and of the passivation layer;
• growing of a third layer on the first layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type;
• and
• producing a first electrode, of a second electrode and of a gate electrode, wherein the first electrode extends vertically from the second layer to the third layer, and the second electrode extends vertically from the second layer partially into the substrate.

A method for production of a lateral HEMT, comprising:

• providing a substrate and a first layer, wherein the first layer has a semiconductor material of a first conduction type and is arranged at least partially on the substrate;
• growing a third layer on the first layer, wherein the third layer has a semiconductor material of a second conduction type, which is complementary to the first conduction type;
• partially removing the first layer and of the third layer;
• growth of a fourth layer and of a second layer on the first layer, wherein the fourth layer has a semiconductor material of the first conduction type, and wherein the second layer has a semiconductor material;
• applying a passivation layer at least partially on the fourth layer;
• and
• producing a first electrode, of a second electrode and of a gate electrode, wherein the first electrode extends vertically from the second layer to the third layer, and the second electrode extends vertically from the second layer partially into the substrate.