Semiconductor device and method for manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsMasahito KANAMURA, Toyoo Miyajima, Toshihiro Ohki
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Abstract
A semiconductor device, comprising: a first semiconductor layer disposed on a substrate; a second semiconductor layer disposed on the first semiconductor layer; a lower insulating film disposed on the second semiconductor layer; a p-type electroconductive oxide film disposed on the lower insulating film; an upper insulating film disposed on the oxide film; and a gate electrode disposed on the upper insulating film, wherein the lower insulating film under the gate electrode has a depressed portion.
Claims19
A semiconductor device, comprising:
- a first semiconductor layer disposed on a substrate;
- a second semiconductor layer disposed on the first semiconductor layer;
- a lower insulating film disposed on the second semiconductor layer;
- a p-type electroconductive oxide film disposed on the lower insulating film;
- an upper insulating film disposed on the oxide film;
- and
- a gate electrode disposed on the upper insulating film,
- wherein the lower insulating film under the gate electrode has a depressed portion.
A semiconductor device, comprising:
- a first semiconductor layer disposed on a substrate;
- a second semiconductor layer disposed on the first semiconductor layer;
- a lower insulating film disposed on the second semiconductor layer;
- a p-type electroconductive oxide film disposed on the lower insulating film under a gate electrode;
- an upper insulating film disposed on the oxide film;
- and
- the gate electrode disposed on the upper insulating film.
A method for manufacturing a semiconductor device, comprising:
- sequentially forming a first semiconductor layer and a second semiconductor layer on a substrate;
- forming a lower insulating film having a depressed portion on the second semiconductor layer under a region for forming a gate electrode;
- forming a p-type electroconductive oxide film on the lower insulating film;
- forming an upper insulating film on the oxide film;
- and
- forming the gate electrode on the upper insulating film.
A method for manufacturing semiconductor device, comprising:
- sequentially forming a first semiconductor layer and a second semiconductor layer on a substrate;
- forming a lower insulating film on the second semiconductor layer;
- forming a p-type electroconductive oxide film on the lower insulating film under a region for forming a gate electrode;
- forming an upper insulating film on the oxide film and the lower insulating film;
- and
- forming the gate electrode on the upper insulating film.
A power supply, comprising:
- a semiconductor device,
- wherein the semiconductor device comprises a first semiconductor layer disposed on a substrate;
- a second semiconductor layer disposed on the first semiconductor layer;
- a lower insulating film disposed on the second semiconductor layer;
- a p-type electroconductive oxide film disposed on the lower insulating film;
- an upper insulating film disposed on the oxide film;
- and a gate electrode disposed on the upper insulating film,
- wherein the lower insulating film under the gate electrode has a depressed portion.
Dependencies are inferred from the claim text.